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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by T2500/D
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. * Blocking Voltage to 400 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
T2500D
TRIACs 6 AMPERES RMS 400 VOLTS
MT2 G
MT1
CASE 221A-07 (TO-220AB) STYLE 4
MAXIMUM RATINGS (TJ = 25C unless otherwise noted.)
Rating Repetitive Peak Off-State Voltage(1) (TJ = -40 to +100C, Gate Open) On-State Current RMS (Full Cycle Sine Wave 50 to 60 Hz) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +80C, Pulse Width = 1 s) Average Gate Power (TC = +80C, t = 8.3 ms) Peak Gate Trigger Current (Pulse Width = 10 s) Operating Junction Temperature Range Storage Temperature Range (TC = +80C) Symbol VDRM 400 IT(RMS) ITSM I2t PGM PG(AV) IGTM TJ Tstg 6 60 15 16 0.2 4 -40 to +100 -40 to +150 Amps Amps A2s Watts Watt Amps C C Value Unit Volts
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
REV 1
Motorola Thyristor Device Data (c) Motorola, Inc. 1999
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T2500D
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.7 Unit C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Peak Blocking Current (Rated VDRM, Gate Open,TJ = 100C) Maximum On-State Voltage (Either Direction)* (IT = 30 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) Gate Trigger Voltage (Continuous dc) (All Quadrants) (VD = 12 Vdc, RL = 12 Ohms) (VD = VDROM, RL = 125 Ohms, TC = 100C) Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 150 mA) Gate Controlled Turn-On Time (Rated VDRM, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 s) Critical Rate-of-Rise of Commutation Voltage (Rated VDRM, IT(RMS) = 6 A, Commutating di/dt = 3.2 A/ms, Gate Unenergized, TC = 80C) Critical Rate-of-Rise of Off-State Voltage (Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100C) T2500D *Pulse Test: Pulse Width Symbol IDRM VTM IGT -- -- -- -- VGT -- 0.2 IH -- 1.25 -- 15 2.5 -- 30 mA 10 20 15 30 25 60 25 60 Volts Min -- -- Typ -- -- Max 2 2 Unit mA Volts mA
tgt dv/dt(c)
-- --
1.6 10
-- --
s V/s
dv/dt -- 75 --
V/s
p 300 s, Duty Cycle p 2%.
QUADRANT DEFINITIONS MT2(+) QUADRANT II QUADRANT I
MT2(+), G(-)
MT2(+), G(+)
G(-) QUADRANT III QUADRANT IV
G(+)
MT2(-), G(-)
MT2(-), G(+)
MT2(-)
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Motorola Thyristor Device Data
T2500D
PACKAGE DIMENSIONS
-T- B F C
SEATING PLANE
T
S
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
4
Q
123
A U K
STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2
H Z L V G D N J R
CASE 221A-07 (TO-220AB) ISSUE Z
Motorola Thyristor Device Data
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T2500D
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Motorola Thyristor Device Data T2500/D

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